Reliability studies on integrated GaAs power-sensor structures using pulsed electrical stress
نویسندگان
چکیده
The transmission line pulse method (TLP) is used to characterise the reliability of bolometric GaAs microwave power-sensors. Two degradation mechanisms are identified during the degradation process of the absorbing NiCr termination, in which the input power is converted into heat. Simulations and a material analysis have been performed in order to characterise the observed degradation mechanisms.
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ورودعنوان ژورنال:
- Microelectronics Reliability
دوره 43 شماره
صفحات -
تاریخ انتشار 2003